Robust Power Semiconductor Systems 2 - Lecture

The lecture conveys a solid understanding of the use of modern semiconductor technologies in power electronic applications. Based on the relevant figures of merit of Si, GaN and SiC based power semiconductors, aspects of circuit design, mounting and packaging and reliability will be covered.

Die Vorlesung vermittelt ein fundiertes Verständnis für den Einsatz moderner Halbleitertechnologien in leistungselektronischen Anwendungen. Ausgehend von den wichtigsten Kenngrößen von Leistungstransistoren auf Si, GaN und SiC Basis werden Aspekte u. a. der Schaltungstechnik, Aufbau- und Verbindungstechnik und Zuverlässigkeit diskutiert.

Part 5: Thermal Analysis
Motivation - Thermal Material Properties - Electro-thermal - Thermo-mechanical entities - Thermal Modeling - Thermal Equivalent Circuits - Thermal FEM Simulation

Part 6: Reliability and Lifetime
Reliability and Lifetime - Reliability Functions - Accelerated Lifetime Tests - Failure Rate Models - Reliability Tests - Failure Mechanisms - Semiconductor Device Level - Package Level

Part 7: GaN-Based Power Transistors
Material Properties - Device Fabrication - Device Performance

German

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Ingmar Kallfass

Dozent

68568747

ingmar.kallfass@ilh.uni-stuttgart.de

12. Feb 2024, 00:00 - 31. Mar 2025, 00:00

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11. Apr 2023 - 23. Jul 2023

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